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| NCV8405 Self-Protected Low Side Driver with Temperature and Current Limit NCV8405 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device is suitable for harsh automotive environments. Features http://onsemi.com V(BR)DSS (Clamped) 42 V RDS(ON) TYP 90 mW @ 10 V ID MAX 6.0 A* * * * * * * * * * * Short-Circuit Protection Thermal Shutdown with Automatic Restart Overvoltage Protection Integrated Clamp for Inductive Switching ESD Protection dV/dt Robustness Analog Drive Capability (Logic Level Input) AEC-Q101 Qualified NCV Prefix for Automotive and Other Applications Requiring Site and Change Control These Devices are Pb-Free and are RoHS Compliant *Max current limit value is dependent on input condition. Drain Overvoltage Protection Gate Input ESD Protection Temperature Limit Current Limit Current Sense Typical Applications * Switch a Variety of Resistive, Inductive and Capacitive Loads * Can Replace Electromechanical Relays and Discrete Circuits * Automotive / Industrial 4 Source MARKING DIAGRAM DRAIN 4 SOT-223 CASE 318E STYLE 3 AYW 8405 G 1 G 2 3 1 2 3 SOURCE GATE DRAIN A = Assembly Location Y = Year W = Work Week 8402 = Specific Device Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NCV8405STT1G NCV8405STT3G Package SOT-223 (Pb-Free) SOT-223 (Pb-Free) Shipping 1000/Tape & Reel 4000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2009 December, 2009 - Rev. P0 1 Publication Order Number: NCV8405/D NCV8405 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Internally Clamped Drain-to-Gate Voltage Internally Clamped Gate-to-Source Voltage Continuous Drain Current Power Dissipation @ TA = 25C (Note 1) @ TA = 25C (Note 2) @ TT = 25C (Note 1) Junction-to-Ambient Steady State (Note 1) Junction-to-Ambient Steady State (Note 2) Junction-to-Tab Steady State (Note 1) (RG = 1.0 MW) Symbol VDSS VDGR VGS ID PD Value 42 42 "14 Unit V V V Internally Limited 1.0 1.7 11.4 130 72 11 275 53 -40 to 150 -55 to 150 W Thermal Resistance RqJA RqJA RqJT EAS VLD TJ Tstg C/W Single Pulse Drain-to-Source Avalanche Energy (VDD = 40 V, VG = 5.0 V, IPK = 2.8 A, L = 80 mH, RG(ext) = 25 W, TJ = 25C) Load Dump Voltage VLD = VA + VS (VGS = 0 and 10 V, RI = 2.0 W, RL = 6.0 W, td = 400 ms) mJ V C C Operating Junction Temperature Storage Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06 thick). 2. Surface-mounted onto 2 sq. FR4 board (1 sq., 1 oz. Cu, 0.06 thick). + ID DRAIN IG + GATE VDS VGS SOURCE - - Figure 1. Voltage and Current Convention http://onsemi.com 2 NCV8405 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) Zero Gate Voltage Drain Current VGS = 0 V, ID = 10 mA, TJ = 25C VGS = 0 V, ID = 10 mA, TJ = 150C (Note 5) VGS = 0 V, VDS = 32 V, TJ = 25C VGS = 0 V, VDS = 32 V, TJ = 150C (Note 5) Gate Input Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Gate Threshold Temperature Coefficient Static Drain-to-Source On-Resistance VGS = 10 V, ID = 1.4 A, TJ = 25C VGS = 10 V, ID = 1.4 A, TJ = 150C (Note 5) VGS = 5.0 V, ID = 1.4 A, TJ = 25C VGS = 5.0 V, ID = 1.4 A, TJ = 150C (Note 5) VGS = 5.0 V, ID = 0.5 A, TJ = 25C VGS = 5.0 V, ID = 0.5 A, TJ = 150C (Note 5) Source-Drain Forward On Voltage SWITCHING CHARACTERISTICS (Note 5) Turn-ON Time (10% VIN to 90% ID) Turn-OFF Time (90% VIN to 10% ID) Slew-Rate ON (70% VDS to 50% VDS) Slew-Rate OFF (50% VDS to 70% VDS) Current Limit VGS = 10 V, VDD = 12 V ID = 2.5 A, RL = 4.7 W VGS = 10 V, VDD = 12 V, RL = 4.7 W VDS = 10 V, VGS = 5.0 V, TJ = 25C VDS = 10 V, VGS = 5.0 V, TJ = 150C (Note 5) VDS = 10 V, VGS = 10 V, TJ = 25C VDS = 10 V, VGS = 10 V, TJ = 150C (Note 5) Temperature Limit (Turn-off) Thermal Hysteresis Temperature Limit (Turn-off) Thermal Hysteresis GATE INPUT CHARACTERISTICS (Note 5) Device ON Gate Input Current Current Limit Gate Input Current Thermal Limit Fault Gate Input Current VGS = 5 V ID = 1.0 A VGS = 10 V ID = 1.0 A VGS = 5 V, VDS = 10 V VGS = 10 V, VDS = 10 V VGS = 5 V, VDS = 10 V VGS = 10 V, VDS = 10 V ESD ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) (Note 5) Electro-Static Discharge Capability Human Body Model (HBM) Machine Model (MM) 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Fault conditions are viewed as beyond the normal operating range of the part. 5. Not subject to production testing. ESD 4000 400 V IGTL IGCL IGON 50 400 0.05 0.4 0.22 1.0 mA mA mA VGS = 5.0 V (Note 5) VGS = 5.0 V VGS = 10 V (Note 5) VGS = 10 V TLIM(off) DTLIM(on) TLIM(off) DTLIM(on) 150 tON tOFF -dVDS/dtON dVDS/dtOFF ILIM 6.0 3.0 7.0 4.0 150 20 110 1.0 0.4 9.0 5.0 10.5 7.5 180 15 165 15 185 11 8.0 13 10 200 C A V/ms ms VGS = 0 V, IS = 7.0 A VSD VGS = VDS, ID = 150 mA VGS(th) VGS(th)/TJ RDS(on) 1.0 1.6 4.0 90 165 105 185 105 185 1.05 100 190 120 210 120 210 V 2.0 V -mV/C mW VDS = 0 V, VGS = 5.0 V IGSSF IDSS V(BR)DSS 42 42 46 45 0.5 2.0 50 51 51 2.0 10 100 mA mA V Test Condition Symbol Min Typ Max Unit SELF PROTECTION CHARACTERISTICS (TJ = 25C unless otherwise noted) (Note 4) http://onsemi.com 3 NCV8405 TYPICAL PERFORMANCE CURVES 10 1000 Emax (mJ) IL(max) (A) TJstart = 25C TJstart = 25C 100 TJstart = 150C TJstart = 150C 1 10 L (mH) 100 10 10 L (mH) 100 Figure 2. Single Pulse Maximum Switch-off Current vs. Load Inductance 10 1000 Figure 3. Single Pulse Maximum Switching Energy vs. Load Inductance TJstart = 25C Emax (mJ) IL(max) (A) 1 TJstart = 25C 100 TJstart = 150C TJstart = 150C 0.1 1 TIME IN CLAMP (ms) 10 10 1 TIME IN CLAMP (ms) 10 Figure 4. Single Pulse Maximum Inductive Switch-off Current vs. Time in Clamp 12 Figure 5. Single Pulse Maximum Inductive Switching Energy vs. Time in Clamp 14 9V 8V TA = 25C 10 V VDS = 10 V 10 8 -40C 25C 12 7 V 10 6 V ID (A) 8 6 4 2 0 0 1 2 VDS (V) 3 100C 4V 5V 3V ID (A) 6 4 2 0 1 2 3 VGS (V) 4 5 150C VGS = 2.5 V 4 5 Figure 6. Output Characteristics Figure 7. Transfer Characteristics http://onsemi.com 4 NCV8405 TYPICAL PERFORMANCE CURVES 300 250 RDS(on) (mW) 200 150 100 150C, ID = 1.4 A 210 190 170 RDS(on) (mW) 150C, ID = 0.5 A 150 130 110 90 70 10 50 0.5 1 -40C, VGS = 5 V -40C, VGS = 10 V 1.5 2 2.5 3 ID (A) 150C, VGS = 10 V 100C, VGS = 10 V 100C, VGS = 5 V 25C, VGS = 5 V 25C, VGS = 10 V 150C, VGS = 10 V 100C, ID = 1.4 A 100C, ID = 0.5 A -40C, ID = 1.4 A 25C, ID = 1.4 A 25C, ID = 0.5 A 8 9 50 -40C, ID = 0.5 A 3 4 5 6 7 VGS (V) 3.5 4 4.5 5 Figure 8. RDS(on) vs. Gate-Source Voltage RDS(on) (VGS = 5 V, TJ = 25C)(NORMALIZED) 2.0 ID = 1.4 A 15 Figure 9. RDS(on) vs. Drain Current VDS = 10 V 13 VGS = 5 V ILIM (A) 11 9 7 150C 5 3 -40C 25C 1.75 1.5 1.25 1.0 VGS = 10 V 100C 0.75 0.5 -40 -20 0 20 40 60 T (C) 80 100 120 140 5 6 7 VGS (V) 8 9 10 Figure 10. Normalized RDS(on) vs. Temperature Figure 11. Current Limit vs. Gate-Source Voltage 10 14 1 12 10 8 VGS = 5 V 6 VDS = 10 V 4 -40 -20 0 0.001 10 0.01 VGS = 10 V IDSS (mA) ILIM (A) 0.1 VGS = 0 V 150C 100C -40C 25C 20 40 60 TJ (C) 80 100 120 140 160 15 20 25 VDS (V) 30 35 40 Figure 12. Current Limit vs. Junction Temperature Figure 13. Drain-to-Source Leakage Current http://onsemi.com 5 NCV8405 TYPICAL PERFORMANCE CURVES 1.2 1.1 1 0.9 0.8 0.7 0.6 -40 VSD (V) ID = 150 mA VGS = VDS 1.1 1 0.9 0.8 0.7 0.6 0.5 -20 0 20 40 60 T (C) 80 100 120 140 0.4 VGS = 0 V 1 2 3 4 5 IS (A) 6 7 8 9 10 150C -40C 25C 100C NORMALIZED VGS(th) (V) Figure 14. Normalized Threshold Voltage vs. Temperature DRAIN-SOURCE VOLTAGE SLOPE (V/ms) 200 ID = 2.5 A VDD = 12 V RG = 0 W 1.500 Figure 15. Body-Diode Forward Characteristics 150 TIME (ms) tr ID = 2.5 A VDD = 12 V RG = 0 W 1.000 -dVDS/dt(on) 0.500 dVDS/dt(off) 0.000 100 td(off) 50 td(on) 0 3 4 5 6 7 VGS (V) 8 tf 9 10 3 4 5 Figure 16. Resistive Load Switching Time vs. Gate-Source Voltage Figure 17. Resistive Load Switching Drain-Source Voltage Slope vs. Gate-Source Voltage DRAIN-SOURCE VOLTAGE SLOPE (V/ms) 1.5 1.3 1.1 0.9 0.7 0.5 0.3 0.1 -0.1 0 500 1000 RG (W) dVDS/dt(off), VGS = 5 V dVDS/dt(off), VGS = 10 V -dVDS/dt(on), VGS = 10 V 6 7 VGS (V) 8 9 10 125 100 75 50 tf, (VGS = 5 V) ID = 2.5 A VDD = 12 V TIME (ms) td(off), (VGS = 10 V) tr, (VGS = 5 V) tf, (VGS = 10 V) td(off), (VGS = 5 V) td(on), (VGS = 5 V) 25 t d(on), (VGS = 10 V) t , (V r GS = 10 V) 0 0 -dVDS/dt(on), VGS = 5 V ID = 2.5 A VDD = 12 V 1500 200 Figure 18. Resistive Load Switching Time vs. Gate Resistance 200 400 600 800 1000 1200 1400 1600 1800 2000 RG (W) Figure 19. Drain-Source Voltage Slope during Turn On and Turn Off vs. Gate Resistance http://onsemi.com 6 NCV8405 TYPICAL PERFORMANCE CURVES 100 50% Duty Cycle RqJA 1" SQ 1 Oz COPPER 10 20% 10% 5% 2% 1 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH (sec) Figure 20. Transient Thermal Resistance 140 120 100 qJA (C/W) 80 60 qJA Curve with PCB cu thk 1.0 oz TA 25C qJA Curve with PCB cu thk 2.0 oz 40 20 0 0 100 200 300 400 500 600 700 COPPER HEAT SPREADER AREA (mm2) Figure 21. qJA vs. Copper http://onsemi.com 7 NCV8405 TEST CIRCUITS AND WAVEFORMS RL VIN RG D G DUT S + VDD - IDS Figure 22. Resistive Load Switching Test Circuit 90% VIN 10% td(ON) tr td(OFF) tf 90% IDS 10% Figure 23. Resistive Load Switching Waveforms http://onsemi.com 8 NCV8405 TEST CIRCUITS AND WAVEFORMS L VDS VIN RG D G DUT S VDD + - tp IDS Figure 24. Inductive Load Switching Test Circuit 5V VIN Tav Tp V(BR)DSS Ipk 0V VDS VDD VDS(on) IDS 0 Figure 25. Inductive Load Switching Waveforms http://onsemi.com 9 NCV8405 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE M D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A A1 b b1 c D E e e1 L1 HE MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10 - MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0 INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 - MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10 4 HE E 1 2 3 e1 b e A q L1 C q 0.08 (0003) A1 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. HDPlus is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 10 NCV8405/D |
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